Enhanced interconnects through filled metal structures

Sameer Shekhar, A. Jain, C. Kuan
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引用次数: 1

Abstract

This paper analyses use of solid metal fill between BGA balls or LGA pins of packages, and between die bumps. The basic principle is to benefit from higher metal-density per unit volume of the substrate in the current path to deliver enhanced electrical, thermal and mechanical performance. Paper conceptualizes different structures and simulated data is presented to show case benefits. Results show power delivery impedance peak reduction by 10 % in the 100 kHz-10 MHz range. In addition, package inductor benefit of 40 % lower DC resistance is reported.
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通过填充金属结构增强互连
分析了固体金属填充物在BGA球和LGA管脚之间以及凸模之间的应用。其基本原理是利用电流路径中单位体积基板更高的金属密度,从而增强电学、热学和机械性能。论文对不同的结构进行了概念化,并给出了仿真数据来展示案例的优势。结果表明,在100 kHz-10 MHz范围内,功率传递阻抗峰值降低了10%。此外,封装电感的直流电阻降低了40%。
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