A novel approach to estimate the impact of analog circuit performance based on the small signal model under process variations

Po-Yu Kuo, Siwat Saibua, Dian Zhou
{"title":"A novel approach to estimate the impact of analog circuit performance based on the small signal model under process variations","authors":"Po-Yu Kuo, Siwat Saibua, Dian Zhou","doi":"10.1109/SOCC.2011.6085098","DOIUrl":null,"url":null,"abstract":"Continuous scaling in CMOS fabrication process makes integrated circuits more vulnerable to process variations. The impact on circuit performance caused by process variations in CMOS circuit is usually analyzed by Monte Carlo method with a large number of simulation runs. This paper proposes a novel approach to estimate the impact of analog circuit performance based on the small signal model under process variations. The accuracy of the small signal model has been verified with CMOS circuit. The proposed approach has been demonstrated by a CMOS two-stage operational transconductance amplifier (OTA). To achieve an accurate estimate, the modified small signal model which consider more parasitic capacitors in CMOS transistor, has been applied in the proposed approach. By applying the proposed approach based on optimization method, the upper and lower bounds of magnitude and phase, can be evaluated accurately in much less computation time compared to Monte Carlo simulations. All experimental results are carried out using a standard 0.35-µm CMOS process technology.","PeriodicalId":365422,"journal":{"name":"2011 IEEE International SOC Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International SOC Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2011.6085098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Continuous scaling in CMOS fabrication process makes integrated circuits more vulnerable to process variations. The impact on circuit performance caused by process variations in CMOS circuit is usually analyzed by Monte Carlo method with a large number of simulation runs. This paper proposes a novel approach to estimate the impact of analog circuit performance based on the small signal model under process variations. The accuracy of the small signal model has been verified with CMOS circuit. The proposed approach has been demonstrated by a CMOS two-stage operational transconductance amplifier (OTA). To achieve an accurate estimate, the modified small signal model which consider more parasitic capacitors in CMOS transistor, has been applied in the proposed approach. By applying the proposed approach based on optimization method, the upper and lower bounds of magnitude and phase, can be evaluated accurately in much less computation time compared to Monte Carlo simulations. All experimental results are carried out using a standard 0.35-µm CMOS process technology.
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一种基于工艺变化下小信号模型的模拟电路性能影响估计方法
CMOS制造过程中的连续缩放使集成电路更容易受到工艺变化的影响。CMOS电路中工艺变化对电路性能的影响通常采用蒙特卡罗方法进行分析,并进行大量的仿真运行。本文提出了一种基于工艺变化的小信号模型来估计模拟电路性能影响的新方法。用CMOS电路验证了小信号模型的精度。该方法已通过CMOS两级操作跨导放大器(OTA)进行了验证。为了获得准确的估计,本文采用了考虑了CMOS晶体管中更多寄生电容的修正小信号模型。与蒙特卡罗模拟相比,采用基于优化方法的方法可以在更短的计算时间内准确地计算出幅度和相位的上下界。所有实验结果均采用标准的0.35µm CMOS工艺技术进行。
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