Design aspects and performance of cost-efficient packaged power amplifiers

A. Bessemoulin, J. Tarazi, P. Evans, S. Mahon
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Abstract

The design aspects and performance of a cost efficient 2-Watt Ku-band power amplifier are presented. The circuit is fabricated at the least spending with 0.5-μm GaAs PHEMT technology and standard plastic QFN package. Thanks to efficient design approaches, this compact packaged power amplifier MMIC (7.1mm2) demonstrates a measured linear gain averaging 30 dB across the full PtP Ku-band, and delivers more than +32 dBm CW power at 1-dB gain compression (P1dB), and +33 dBm output power in saturation (Psat). Typical measured OIP3 is greater than +41 dBm. To further reduce the cost and minimize component count in RF module, the PA MMIC integrates a temperature compensated on-chip power detector with 45-dB dynamic range for output power monitoring, together with on-chip EOS/ESD protections to ±400 V CDM for rugged and reliable operation. The overall PA performance, covering both the 13 and 15 GHz PtP bands with a single circuit, competes favorably well to other more advanced solutions reported in the literature or available on the market. Furthermore, the presented compact design considerations can be applied to greatly reduce manufacturing cost in other circuits and technologies (e.g. GaN).
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性价比高的封装功率放大器的设计和性能
介绍了一种低成本的2瓦ku波段功率放大器的设计要点和性能。该电路采用0.5 μm GaAs PHEMT技术和标准塑料QFN封装,成本最低。得益于高效的设计方法,这款紧凑型封装功率放大器MMIC (7.1mm2)在整个PtP ku波段具有平均30 dB的测量线性增益,并在1dB增益压缩(P1dB)下提供超过+32 dBm的连续功率,在饱和(Psat)下提供+33 dBm输出功率。典型测量的OIP3大于+41 dBm。为了进一步降低成本并最大限度地减少射频模块中的组件数量,PA MMIC集成了具有45 db动态范围的温度补偿片上功率检测器,用于输出功率监测,以及片上EOS/ESD保护(±400 V CDM),确保坚固可靠的运行。整体的PA性能,覆盖13 GHz和15 GHz的PtP频段,与文献中报道的或市场上可用的其他更先进的解决方案相比,具有良好的竞争力。此外,提出的紧凑设计考虑可以应用于大大降低其他电路和技术(例如氮化镓)的制造成本。
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