{"title":"77 GHz integrated patch antennae in 0.18 µm CMOS technology","authors":"Sanjeev Kumar, S. Chatterjee, S. Koul","doi":"10.1109/APMC.2016.7931481","DOIUrl":null,"url":null,"abstract":"This paper presents two patch antennae at a nominal resonance frequency of 77 GHz, namely a thin-substrate antenna and a thick-substrate antenna, using a standard 0.18 µm CMOS technology. Both the antennae are implemented on metal-6. The thin-substrate antenna uses metal-5 as the ground plane, and the thick-substrate antenna uses metal-1 as the ground plane. The thin-substrate antenna was fabricated on a 0.18 µm CMOS process and characterized. The thick-substrate antenna was only simulated. Measurements of the thin-substrate antenna show a peak S11 of −18.22 dB at 99.8 GHz. In simulation, the thin-substrate antenna has a peak gain and radiation efficiency of −25 dB and 1% respectively at 77 GHz. The thick-substrate antenna has a simulated peak gain and radiation efficiency of 5.18 dB and 58.31% respectively at 77 GHz.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2016.7931481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents two patch antennae at a nominal resonance frequency of 77 GHz, namely a thin-substrate antenna and a thick-substrate antenna, using a standard 0.18 µm CMOS technology. Both the antennae are implemented on metal-6. The thin-substrate antenna uses metal-5 as the ground plane, and the thick-substrate antenna uses metal-1 as the ground plane. The thin-substrate antenna was fabricated on a 0.18 µm CMOS process and characterized. The thick-substrate antenna was only simulated. Measurements of the thin-substrate antenna show a peak S11 of −18.22 dB at 99.8 GHz. In simulation, the thin-substrate antenna has a peak gain and radiation efficiency of −25 dB and 1% respectively at 77 GHz. The thick-substrate antenna has a simulated peak gain and radiation efficiency of 5.18 dB and 58.31% respectively at 77 GHz.