Facet Heating Mechanisms in High Power Semiconductor Lasers Investigated by Spatially Resolved Thermoreflectance

D. Pierścińska, K. Pierściński, A. Kozłowska, A. Malag, A. Jasik, M. Bugajski
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引用次数: 3

Abstract

Thermal properties, degradation behaviour and optical and current contributions to facet heating of high power diode lasers emitting at 808 nm are analysed. The investigated devices with non-injected facets are designed to reduce carrier recombination at the facet surface. Spatially resolved thermoreflectance spectroscopy is used to measure temperature distribution maps over the laser facet. This study compares the facet temperature distributions for fresh (undamaged) and degraded laser. The measurements results indicate for the strong contribution of reabsorption of the laser emission to the overall facet heating for lasers with non-injected facets.
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利用空间分辨热反射研究高功率半导体激光器的小面加热机制
分析了808 nm高功率二极管激光器的热特性、退化行为以及对激光器表面加热的光学和电流贡献。所研究的具有非注入facet的器件旨在减少facet表面的载流子复合。空间分辨热反射光谱用于测量激光表面的温度分布图。本研究比较了新鲜(未损坏)和退化激光的表面温度分布。测量结果表明,激光发射的重吸收对非注入激光器的整体面加热有很大的贡献。
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