{"title":"Selective regrowth of InGaAs/InP MQWs on SOI for telecom band emission","authors":"Jie Li, Ying Xue, Zhao Yan, Yu Han, K. Lau","doi":"10.1109/IPC53466.2022.9975450","DOIUrl":null,"url":null,"abstract":"We demonstrated selective regrowth of InGaAs/InP multi-quantum wells (MQWs) on silicon-on-insulator (SOI) wafers for telecom band emission. The MQWs growth was guided by regrowth templates fabricated on a monolithic InP/SOI platform. Flat (001) III-V surface with a roughness of 0.381 nm, QWs with strong photoluminescence (PL) emission at 1.55 $\\mu$m, and narrow full-width-at-half-maximum (FWHM) of 73 meV were achieved.","PeriodicalId":202839,"journal":{"name":"2022 IEEE Photonics Conference (IPC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPC53466.2022.9975450","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrated selective regrowth of InGaAs/InP multi-quantum wells (MQWs) on silicon-on-insulator (SOI) wafers for telecom band emission. The MQWs growth was guided by regrowth templates fabricated on a monolithic InP/SOI platform. Flat (001) III-V surface with a roughness of 0.381 nm, QWs with strong photoluminescence (PL) emission at 1.55 $\mu$m, and narrow full-width-at-half-maximum (FWHM) of 73 meV were achieved.
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