Effect of nonparabolicity on Quantum Well laser of low band gap semiconductors

Abstract

Three energy band model of Kane has been used to develop a general theory of optical gain for Quantum Well (QW) laser of low band gap semiconductors. Wave vector equation dependence on optical matrix element (OME) has been incorporated in determining the laser gain for these semiconductors having nonparabolic energy band profile. The effect of nonparabolicity is seen to increase the monochromaticity of laser. Intraband scattering and auger recombination present in the system have been found to play a major role in shifting the gain peak towards shorter wavelength, reduce line width and decrease the peak gain.