ANALYTICAL MODEL FOR THE CALCULATION OF LOSSES IN POWER MOSFETS FOR DATABASE APPLICATIONS

Abstract

– This work presents a simple and accurate analytical model for power MOSFET loss calculation. A comparative analysis among commonly used methods in the literature and the proposed approach is presented. The proposed model uses a simplification of the charge behavior of MOSFET parasitic capacitances. Junction temperature variation with frequency is considered. Thermal measurements are used to validate the model up to 300 kHz. Results demonstrate the accuracy of the proposed model using two different MOSFET part numbers, of superjunction and conventional silicon technology. Due to the accuracy and simplicity of the model, it is recommended for use in analyses where many operating points are tested (voltage, frequency, power), genetic algorithms, and database applications.