C. Costrini, M. Calori, A. Cetronio, C. Lanzieri, S. Lavanga, M. Peroni, E. Limiti, A. Serino, G. Ghione, G. Melone
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引用次数: 21
Abstract
In this paper a first iteration design, fabrication and test of a two-stage X-Band MMIC HPA in micro-strip AlGaN/GaN technology is reported. With 20 V drain voltage operating bias point, at 3 dB compression point, the HPA delivers a pulsed output power ranging from 21 to 28.5 W, an associated gain from 12.9 to 16.5 dB and an associated PAE from circa 30% to 40%, over the 8-10.5 GHz frequency bandwidth. In the best performance frequency points (8.5 and 9 GHz) the HPA exhibits a saturated output power of 30 W with an associated PAE of 40%.
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