{"title":"Temperature dependent visible photolumineseence of Eu-doped GaN on Silicon","authors":"Chang-won Lee, H. Everitt, J.M. Javada, A. Stecki","doi":"10.1364/FIO.2003.WFF4","DOIUrl":null,"url":null,"abstract":"A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies.","PeriodicalId":432096,"journal":{"name":"Conference on Lasers and Electro-Optics, 2003. CLEO '03.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Lasers and Electro-Optics, 2003. CLEO '03.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/FIO.2003.WFF4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies.
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