{"title":"GaN-based technology for MQW modulating retro-reflectors operating in the visible and ultraviolet spectral ranges","authors":"C. Rivera, J. Cabrero, P. Munuera, F. Aragón","doi":"10.1109/ICSOS.2011.5783676","DOIUrl":null,"url":null,"abstract":"Calculations based on the k·p perturbation approach have been used to study the properties of GaN-based electroabsorption modulators. The results indicate that optical transitions are dominated by the effect of piezoelectrically-induced electric fields. The measured extinction ratio of non-optimized devices is higher than 3 and 2.5 for modulators operating around 475 nm and 400 nm, respectively. In addition to applied voltage, carrier-induced screening seems an efficient method to drive the modulation.","PeriodicalId":107082,"journal":{"name":"2011 International Conference on Space Optical Systems and Applications (ICSOS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Space Optical Systems and Applications (ICSOS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSOS.2011.5783676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Calculations based on the k·p perturbation approach have been used to study the properties of GaN-based electroabsorption modulators. The results indicate that optical transitions are dominated by the effect of piezoelectrically-induced electric fields. The measured extinction ratio of non-optimized devices is higher than 3 and 2.5 for modulators operating around 475 nm and 400 nm, respectively. In addition to applied voltage, carrier-induced screening seems an efficient method to drive the modulation.