Analysis of temperature distribution characteristics from an improved IGBT power cycling test

Abstract

The power cycling test is an important method to study the reliability of IGBT module. In order to solve the problem that traditional power cycling test simulation load is too idealistically, we proposed an improved power cycling test simulation based on the traditional power cycling test simulation considering the anode spike voltage during turn off process and the voltage drop of MOSFET and PNP transistors device in the process of conducting. In addition, using ANSYS simulation software for simulate the both power cycling test, we get the temperature field distribution of the IGBT module by the two power cycling simulation. Considering the transient characteristics during the IGBT turn-off process, so that the loads in improved power cycling test simulation more realistic, therefore a more accurate simulation result than traditional test. Nearly 10% lower than the highest temperature of the temperature field of conventional power cycling test. This simulation provides a more accurate theory for the power cycling test in the IGBT applications.