Layout-level Vulnerability Ranking from Electromagnetic Fault Injection

Lang Lin, Jimin Wen, Harsh Shrivastav, Weike Li, Hua Chen, Gang Ni, Sreeja Chowdhury, C. Chow, N. Chang
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Abstract

Trusted microelectronics are increasingly threatened by fault injection attacks through a variety of physical means. Electromagnetic fault injection (EMFI) is a low-cost but effective approach to induce parasitic currents on a victim chip. To address the gap between logic fault principle and silicon EMFI mechanism, a layout-level simulation methodology to identify physical vulnerabilities of the victim chip is needed. In this paper, a fast numerical inductance solver is proposed to characterize the location-dependent coupling effects between EM field signal and on-chip wires. To validate the simulation accuracy, the result from our solver is calibrated with a 3D EM field solver to achieve great correlation. Leveraging parallel computing techniques, our tile-based simulation on a large design has been demonstrated as an accurate and effective ranking of EMFI vulnerabilities of the victim chip.
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电磁故障注入的布图级漏洞排序
通过各种物理手段进行的故障注入攻击对可信微电子的威胁越来越大。电磁故障注入(EMFI)是一种低成本但有效的在受损芯片上诱导寄生电流的方法。为了解决逻辑故障原理与硅EMFI机制之间的差距,需要一种布图级仿真方法来识别受害芯片的物理漏洞。本文提出了一种快速的数值电感求解器来表征电磁场信号与片上导线之间的位置依赖耦合效应。为了验证仿真的准确性,将求解器的结果与三维电磁场求解器进行了校准,以获得较高的相关性。利用并行计算技术,我们在大型设计上的基于瓷砖的模拟已被证明是受害者芯片的EMFI漏洞的准确有效排名。
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