{"title":"The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology","authors":"A. Watson, S. Voldman","doi":"10.1109/BIPOL.2004.1365772","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the influence and improvement of deep trench (DT) isolation, and bipolar sub-collector on CMOS latchup in a 0.13 /spl mu/m CMOS-based 200/285 GHz (f/sub T//f/sub max/) SiGe HBT technology.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
This paper demonstrates the influence and improvement of deep trench (DT) isolation, and bipolar sub-collector on CMOS latchup in a 0.13 /spl mu/m CMOS-based 200/285 GHz (f/sub T//f/sub max/) SiGe HBT technology.
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