A Family of Si and SiC devices-based Short Commutation Loop Hybrid-NPC Rectifiers

Satish Belkhode, A. Shukla, S. Doolla
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Abstract

The silicon carbide (SiC)-based converters are emerging as an attractive solution for various industrial and utility scale applications due to their several important features. However, utilization of SiC devices in these systems also suffer from some challenges, such as higher cost, large turn-off overvoltage peaks, and increased conduction losses leading to restricted system performance. In this paper, a family of short commutation loop-based three-level hybrid active neutral-point-clamped rectifier (SCL-HNPCR) comprising SiC MOSFETs and Si/SiC diodes is proposed to address the afore-mentioned challenges. The proposed SCL-HNPCRs not only achieve high efficiency at reduced cost but also offer reduced turn-off voltage peak without adding any external passive components. Moreover, with the proposed control scheme, the SCL-HNPCRs minimize the conduction losses of SiC MOSFETs, mitigate the crosstalk related issues and achieve balanced loss distribution across the switching devices leading to optimized utilization. In this paper, the structure and operating principles of the proposed topology are discussed with the proposed control scheme. Further, analytical and simulation results are presented with the comparative evaluation against the existing NPC-derived rectifiers. Finally, the experimental validation results are demonstrated with the developed prototypes.
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一类基于硅和碳化硅器件的短换流环路混合- npc整流器
基于碳化硅(SiC)的变换器由于其几个重要特性而成为各种工业和公用事业规模应用的有吸引力的解决方案。然而,在这些系统中使用SiC器件也面临着一些挑战,例如更高的成本,大的关断过电压峰值,以及导致系统性能受限的导通损耗增加。本文提出了一种由SiC mosfet和Si/SiC二极管组成的基于短换流环的三电平混合有源中性点箝位整流器(SCL-HNPCR)来解决上述挑战。所提出的scl - hnpcr不仅效率高,成本低,而且在不增加任何外部无源元件的情况下具有较低的关断电压峰值。此外,利用所提出的控制方案,SCL-HNPCRs最大限度地减少了SiC mosfet的传导损耗,减轻了串扰相关问题,并实现了开关器件之间的平衡损耗分布,从而优化了利用率。本文讨论了所提出的拓扑结构和工作原理以及所提出的控制方案。此外,还给出了分析和仿真结果,并与现有的npc衍生整流器进行了比较评估。最后,用所研制的样机对实验结果进行了验证。
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