{"title":"100 MHz, 85% efficient integrated AlGaAs/GaAs supply modulator for RF power amplifier modules","authors":"Han Peng, V. Pala, T. Chow, M. Hella","doi":"10.1109/APEC.2013.6520282","DOIUrl":null,"url":null,"abstract":"A 100 MHz DC-DC converter for RF power amplifier modules employing polar modulation is presented. A resonant low side gate driver and phase shedding/segmentation in the output stage are used for light load efficiency improvement. The proposed two-phases four-segments flip chip DC-DC converter is implemented in 0.5 μm AlGaAs/GaAs p-HEMT technology and occupies 2.5×2 mm2 for the two segments. An efficiency improvement of 5% is achieved at 4.5 V to 1 V conversion using the resonant low side gate driver. The peak efficiency at 4.5 V/3.3 V and 2 A output current is 85% with the peak value maintained as the load current changes from 0.2 A to 2.8 A under phase shedding/segmentation.","PeriodicalId":256756,"journal":{"name":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.2013.6520282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A 100 MHz DC-DC converter for RF power amplifier modules employing polar modulation is presented. A resonant low side gate driver and phase shedding/segmentation in the output stage are used for light load efficiency improvement. The proposed two-phases four-segments flip chip DC-DC converter is implemented in 0.5 μm AlGaAs/GaAs p-HEMT technology and occupies 2.5×2 mm2 for the two segments. An efficiency improvement of 5% is achieved at 4.5 V to 1 V conversion using the resonant low side gate driver. The peak efficiency at 4.5 V/3.3 V and 2 A output current is 85% with the peak value maintained as the load current changes from 0.2 A to 2.8 A under phase shedding/segmentation.
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