Comparison of entrance surface air kerma measurement with MTS-N (LiF: Mg, Ti) chips with a kilovoltage X-ray source

A. Omojola, S. Adeneye, M. Akpochafor, Isiaka Olusola Akala, A. Agboje
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Abstract

Objective: Radiation detectors are key components that ensure the accuracy and performances of dosimetry equipment. The study is aimed to compare the mean entrance surface air kerma (ESAK) between a DCT-10mm ionization chamber (IC) and MTS-N (LiF: Mg, Ti) chips when both detectors are exposed to ≤ 5mGy with a 10 by 10 field size, with an X-ray source and to determine the accuracy of the Thermoluminescent (TL) chips. Also, the dose will be compared to similar studies. Materials and Methods: A functional, Digital Radiography (DR) X-ray System was used. A DCT-10mm ionization chamber (IC) and an XR Multidetector was positioned at a Source to Image Distance (SID) of 100cm on polystyrene, about 20cm thick. An X-ray spectrum generated at a Practical Peak Voltage (PPV) of 60-107kV with Half Value Layer (HVL) of 2.4-4.3mmAl and filtration > 3mmAl was used. The same setup was used for the MTS-N chips. Results: The mean doses for 1-5 mGy with the MTS-N chips were 1.07±0.07, 1.60±0.13, 2.23±0.11, 2.58±0.07 and 3.45±0.10 mGy respectively, with accuracies of 7, 20, 26, 36 and 31%. Dose accuracy at 1and 2mGy was within 25% respectively. Dose accuracies at 3, 4 and 5mGy was within >25%. The correction factor for 1-5mGy was 0.94, 1.25, 1.35, 1.55 and 1.45 respectively. Conclusion: Validation of the MTS-N chips with the reference ionization chamber to this study was within 36%. The Radiation and Nuclear Safety Authority (STUK) recommends that ESAK be within 25% for entrance surface dose. ESAK accuracy mostly increased with dose as observed in this study.
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千伏x射线源MTS-N (LiF: Mg, Ti)芯片入口表面空气热测量的比较
目的:辐射探测器是保证剂量测定设备准确性和性能的关键部件。该研究旨在比较DCT-10mm电离室(IC)和MTS-N (LiF: Mg, Ti)芯片在x射线源下暴露于≤5mGy的10 × 10场尺寸时的平均入口表面空气克尔曼(ESAK),并确定热致发光(TL)芯片的准确性。此外,该剂量将与类似研究进行比较。材料和方法:使用功能性数字x线摄影(DR)系统。将DCT-10mm电离室(IC)和XR多探测器放置在聚苯乙烯上,源像距离(SID)为100cm,厚度约为20cm。采用60-107kV实用峰值电压(PPV),半值层(HVL)为2.4-4.3mmAl,滤波> 3mmAl时生成的x射线谱。MTS-N芯片使用了相同的设置。结果:MTS-N芯片对1 ~ 5 mGy的平均剂量分别为1.07±0.07、1.60±0.13、2.23±0.11、2.58±0.07、3.45±0.10 mGy,准确度分别为7.20、26.36、31%。1mgy和2mGy的剂量精度分别在25%以内。3、4和5mGy的剂量精度在>25%以内。1-5mGy的校正因子分别为0.94、1.25、1.35、1.55和1.45。结论:采用参考电离室的MTS-N芯片对本研究的验证率在36%以内。辐射和核安全局(STUK)建议ESAK在25%的入口表面剂量内。在本研究中观察到,ESAK准确度主要随剂量增加而增加。
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