Transient Thermal Analysis of active device (FETs) for high-power applications

Liang Zhou, Zhe Wang, W. Yin, J. Mao
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引用次数: 1

Abstract

In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and LDMOS are extracted. These will be useful for further analyze the thermal effects so as to prevent on-chip device breakdown by the Impact of Intentional Electromagnetic Interference(IEMI).
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大功率有源器件(fet)的瞬态热分析
本文研究了高功率脉冲下通信系统中有源器件(包括GaAsFET、GaNHFET和LDMOSFET)瞬态热分析的影响。采用混合有限元方法,如逐单元有限元法(EBE-FEM)和预条件共轭梯度法(PCG)技术,提取了GaAsFET、GaNHFET和LDMOS的热响应。这将有助于进一步分析热效应,以防止芯片上器件因有意电磁干扰(IEMI)的影响而击穿。
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