Use of SiGe Photo-Transistor in RoF links based on VCSEL and standard single mode fiber for low cost LTE applications

2018 International Topical Meeting on Microwave Photonics (MWP) Pub Date : 2018-10-01 DOI:10.1109/MWP.2018.8552865

J. Nanni, Z. Tegegne, C. Algani, G. Tartarini, J. Polleux

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引用次数: 11

Abstract

This paper presents for the first time the transmission of LTE signal based-on Radio-over-Fiber (RoF) scheme by using SiGe Hetero-junction Photo-Transistor as photo-receiver. The photo-transistor is fabricated based-on the commercial bipolar transistor technology. An 850 nm single mode Vertical Cavity Surface Emitting Lasers (VCSELs) and Standard Single Mode Fiber (SSMF) are used to complete the link so that makes the total cost of the system very low. The transmission of 20 MHz bandwidth LTE signal with high modulation format is achieved. The performance of the system is evaluated through the measurement of Error Vector Magnitude (EVM) under different operation conditions of the photo-transistor (in photodiode mode, photo-transistor mode and two terminals mode). We reach an EVM below 8% for the input power of -25 dBm to -2 dBm when the photo-transistor operates under two terminals condition. This EVM value fulfills the requirements of the LTE standard for 64-QAM modulation. The stability of the system with regard temperature variation and modal noise is also presented.

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在低成本LTE应用中基于VCSEL和标准单模光纤的RoF链路中使用SiGe光电晶体管

本文首次提出了利用SiGe异质结光电晶体管作为光接收机，实现基于光纤无线电(RoF)方案的LTE信号传输。光电晶体管是在商业双极晶体管技术的基础上制造的。使用850 nm单模垂直腔面发射激光器(VCSELs)和标准单模光纤(SSMF)完成连接，使系统的总成本非常低。实现了高调制格式的20mhz带宽LTE信号的传输。通过测量在光电二极管模式、光电晶体管模式和双端模式下不同工作状态下的误差矢量幅值(EVM)来评价系统的性能。当光电晶体管工作在双端条件下时，在-25 dBm到-2 dBm的输入功率范围内，EVM低于8%。该EVM值满足64-QAM调制的LTE标准要求。给出了系统在温度变化和模态噪声影响下的稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 International Topical Meeting on Microwave Photonics (MWP)

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