T. Lacave, P. Chevalier, Y. Campidelli, M. Buczko, L. Depoyan, L. Berthier, G. Avenier, C. Gaquière, A. Chantre
{"title":"Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs","authors":"T. Lacave, P. Chevalier, Y. Campidelli, M. Buczko, L. Depoyan, L. Berthier, G. Avenier, C. Gaquière, A. Chantre","doi":"10.1109/BIPOL.2010.5667965","DOIUrl":null,"url":null,"abstract":"This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get fMAX above 400 GHz. The effects of the final spike annealing temperature, the emitter doping species, the base and collector doping levels and the Si capping layer thickness are presented and discussed.","PeriodicalId":316111,"journal":{"name":"2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2010.5667965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get fMAX above 400 GHz. The effects of the final spike annealing temperature, the emitter doping species, the base and collector doping levels and the Si capping layer thickness are presented and discussed.
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