Y. Nishidate, J. Kholopova, A. Kovalchuk, B. Shevchenko, I. Khmyrova, S. Shapoval
{"title":"Modeling of light-emitting diode with nonuniform current injection","authors":"Y. Nishidate, J. Kholopova, A. Kovalchuk, B. Shevchenko, I. Khmyrova, S. Shapoval","doi":"10.1109/NUSOD.2016.7547088","DOIUrl":null,"url":null,"abstract":"Light-emitting diode (LED) with nonuniform current injection caused by the mesh-like design of top metal electrode is studied numerically. Three-dimensional Laplace equation for electric potential is solved by finite element method. The numerical model incorporates mapped infinite element to account for potential decay far away from the LED structure and finite element model developed for boundary condition at semiconductor-air interface in the mesh opening. Simulation results demonstrate the effect of the mesh geometrical parameters on the total output power.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"71 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7547088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Light-emitting diode (LED) with nonuniform current injection caused by the mesh-like design of top metal electrode is studied numerically. Three-dimensional Laplace equation for electric potential is solved by finite element method. The numerical model incorporates mapped infinite element to account for potential decay far away from the LED structure and finite element model developed for boundary condition at semiconductor-air interface in the mesh opening. Simulation results demonstrate the effect of the mesh geometrical parameters on the total output power.
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