{"title":"A novel trench-type LIGBT having superior electrical characteristics","authors":"E. Kang, S. Moon, Sangsig Kim, M. Sung","doi":"10.1109/IECON.2001.975861","DOIUrl":null,"url":null,"abstract":"A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19 /spl mu/m. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm/sup 2/, 540A/cm/sup 2/, and 1230A/cm/sup 2/, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p/sup +/ cathode layer underneath the n/sup +/ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT occurs late.","PeriodicalId":345608,"journal":{"name":"IECON'01. 27th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.37243)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IECON'01. 27th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.37243)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IECON.2001.975861","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19 /spl mu/m. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm/sup 2/, 540A/cm/sup 2/, and 1230A/cm/sup 2/, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p/sup +/ cathode layer underneath the n/sup +/ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT occurs late.
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