A new type of CMOS inverter with Lubistor load and NMOS driver

Abstract

This paper presents a non-conventional CMOS device, which is composed of an nMOSFET and a tunneling field effect transistor (TFET) for driver and load. Based on the measurement data of TFET device published, we have for the first time drawn the Q line of the new designed CMOS compared with the conventional CMOS to verify its feasibility. The static power consumption of it can be optimized and reduced to 4.6E–8 A, and all of the logic operations are correct and have enough swing for manipulating its following operation. Due to its unique structure and the output node being shared by the load and the driver, the integration density of it can be reduced dramatically. The area benefit thus more than 58.5% has been achieved compared with the conventional CMOS layout. In addition, the delay time is improved more than 63%.