{"title":"A 128×1030 element CCD image sensor for a periscope camera system","authors":"M. Farrier, R. Dyck","doi":"10.1109/ISSCC.1980.1156053","DOIUrl":null,"url":null,"abstract":"An imaging development, affording up to 128 lines of integration, with six exposure control taps, will be discussed. Designed with 20μm square sense elements, the active sensor area is 20.6mm long. Device employs an optically tailored polysilicon gate structure, buried channel register and floating gate preamp.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1980.1156053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An imaging development, affording up to 128 lines of integration, with six exposure control taps, will be discussed. Designed with 20μm square sense elements, the active sensor area is 20.6mm long. Device employs an optically tailored polysilicon gate structure, buried channel register and floating gate preamp.
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