Analysis of the phase noise contributions in optoelectronic oscillator with optical gain

G. Dangoisse, P. Berger, V. Crozatier, F. van Dijk, C. Caillaud, M. Verdun, Nadège Le Grand, Xavier Prat, G. Canat
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Abstract

Thanks to the development of high power uni-travelling-carrier photodiodes, we studied optoelectronic oscillators architectures with optical gain. We compared the phase noise performances with two different optical amplifiers, based on erbium-doped fiber or semiconductor. Optical intensity noise is the main limitation for the phase noise, both at low and high offset frequencies. With a semiconductor optical amplifier, ultra-low phase noise is reached with equivalent performances from 8 to 15 GHz.
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具有光学增益的光电振荡器相位噪声贡献分析
由于高功率单行载流子光电二极管的发展,我们研究了具有光增益的光电振荡器结构。比较了掺铒光纤和半导体两种光放大器的相位噪声性能。在低偏频和高偏频下,光强噪声是相位噪声的主要限制因素。使用半导体光放大器,达到超低相位噪声,等效性能为8至15 GHz。
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