Manufacturing of roughness standard samples based on ACF/PSD model programming

J. Reche, M. Besacier, P. Gergaud, Y. Blancquaert
{"title":"Manufacturing of roughness standard samples based on ACF/PSD model programming","authors":"J. Reche, M. Besacier, P. Gergaud, Y. Blancquaert","doi":"10.1117/12.2327095","DOIUrl":null,"url":null,"abstract":"Currently, Line Edge Roughness (LER) and Line Width Roughness (LWR) control presents a huge challenge for the lithography step in microelectronic industries. For advanced nodes, this morphological aspect reaches the same order of magnitude than the Critical Dimension, which leads to an increased power consumption by transistors and devices. Hence, the control of roughness needs an adapted metrology. This study proposes to manufacture roughness standard samples and their validation. These samples can be used as standards to evaluate the capabilities of several tools. The preliminary part of this study has been carried out with periodical roughness sample to demonstrate the metrology approach. Further, programming of roughness based on Power Spectral Density (PSD) with Auto-Correlation Function (ACF) model is used to achieve roughness close to the real roughness case. A description of how design programmed roughness has been made and its exposition in the real conditions are detailed in this study. Moreover, a specific methodology of control has been developed, the results obtained have been compared with design inputs and mostly validated by experimental processes. This work represents the first step of manufacturing roughness standard samples based on PSD model design.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"10775 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Mask and Lithography Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2327095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Currently, Line Edge Roughness (LER) and Line Width Roughness (LWR) control presents a huge challenge for the lithography step in microelectronic industries. For advanced nodes, this morphological aspect reaches the same order of magnitude than the Critical Dimension, which leads to an increased power consumption by transistors and devices. Hence, the control of roughness needs an adapted metrology. This study proposes to manufacture roughness standard samples and their validation. These samples can be used as standards to evaluate the capabilities of several tools. The preliminary part of this study has been carried out with periodical roughness sample to demonstrate the metrology approach. Further, programming of roughness based on Power Spectral Density (PSD) with Auto-Correlation Function (ACF) model is used to achieve roughness close to the real roughness case. A description of how design programmed roughness has been made and its exposition in the real conditions are detailed in this study. Moreover, a specific methodology of control has been developed, the results obtained have been compared with design inputs and mostly validated by experimental processes. This work represents the first step of manufacturing roughness standard samples based on PSD model design.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于ACF/PSD模型编程的粗糙度标准样件制造
目前,线边粗糙度(LER)和线宽粗糙度(LWR)的控制是微电子行业光刻工艺的一个巨大挑战。对于高级节点,这种形态方面达到与关键维度相同的数量级,这导致晶体管和器件的功耗增加。因此,粗糙度的控制需要一种适应的计量方法。本研究拟制作粗糙度标准样品并进行验证。这些示例可以用作评估几种工具功能的标准。本研究的初步部分已经进行了周期性粗糙度样品,以证明计量方法。在此基础上,基于功率谱密度(PSD)和自相关函数(ACF)模型对粗糙度进行编程,使粗糙度更接近真实粗糙度情况。在本研究中,详细描述了如何编制设计程序的粗糙度及其在实际条件下的说明。此外,还开发了一种特定的控制方法,所获得的结果已与设计输入进行了比较,并大多通过实验过程进行了验证。本工作是基于PSD模型设计制造粗糙度标准样品的第一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Synergy between quantum computing and semiconductor technology New registration calibration strategies for MBMW tools by PROVE measurements OPC flow for non-conventional layouts: specific application to optical diffusers Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach High-precision optical constant characterization of materials in the EUV spectral range: from large research facilities to laboratory-based instruments
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1