E. Bayer, W. Bucksch, K. Scoones, K. Wagensohner, J. Erdeljac, L. Hutter
{"title":"A 1.0 /spl mu/m linear BiCMOS technology with power DMOS capability","authors":"E. Bayer, W. Bucksch, K. Scoones, K. Wagensohner, J. Erdeljac, L. Hutter","doi":"10.1109/BIPOL.1995.493883","DOIUrl":null,"url":null,"abstract":"A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 m/spl Omega/.cm/sup 2/. The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 m/spl Omega/.cm/sup 2/. The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail.
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