J. Janssen, M. van Heijningen, K. Hilton, J. O. Maclean, D. Wallis, J. Powell, M. Uren, T. Martin, F. V. van Vliet
{"title":"X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling","authors":"J. Janssen, M. van Heijningen, K. Hilton, J. O. Maclean, D. Wallis, J. Powell, M. Uren, T. Martin, F. V. van Vliet","doi":"10.1109/EMICC.2008.4772261","DOIUrl":null,"url":null,"abstract":"Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772261","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.