X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling

J. Janssen, M. van Heijningen, K. Hilton, J. O. Maclean, D. Wallis, J. Powell, M. Uren, T. Martin, F. V. van Vliet
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引用次数: 24

Abstract

Single pole double throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore gallium nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.
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x波段GaN SPDT MMIC,线性功率处理超过25瓦
单极双掷开关是相控阵雷达收发模块中越来越重要的器件。SPDT开关必须能够处理高功率放大器的输出功率,并且必须提供足够的隔离,以在收发模块发射时保护接收链中的低噪声放大器。因此氮化镓技术成为大功率SPDT开关设计的关键技术。该技术在微波频率上表现出良好的性能,能够处理高功率。设计、测量和评估了一种线性功率处理超过25 W的x波段SPDT开关。该电路是在QinetiQ建立的共面波导AlGaN/GaN技术中设计的。
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