Design And Fabrication Of SIO2 Micromechanical Structures Inside Anisotropically Etched Cavity

P. Pal, S. Tuli, S. Chandra
{"title":"Design And Fabrication Of SIO2 Micromechanical Structures Inside Anisotropically Etched Cavity","authors":"P. Pal, S. Tuli, S. Chandra","doi":"10.1142/S1465876303001587","DOIUrl":null,"url":null,"abstract":"In the present work, we report a novel process for fabricating suspended silicon dioxide micro-structures inside the anisotropically etched cavity formed in (100) silicon wafers. Using this new process, the moving parts are \"recessed\" in the substrate which can be packaged and handled easily compared to non-recessed structures. In the fabrication process, spin coated liquid photoresist is used. There is a common problem of thinning of photoresist on convex edges of the cavity during photolithography steps. As a result, silicon dioxide is etched away from these edges. During subsequent anisotropic etching of silicon to release the microstructures, the unprotected convex edges are also etched resulting in failure of the process. To overcome this problem, two different methods are used. In the first method, high viscosity positive photoresist (Shipley STR-1045) is used and the multiple coatings are carried out to cover the convex edges adequately. This protects the oxide on convex edges in buffered hydrofluo...","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Int. J. Comput. Eng. Sci.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S1465876303001587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In the present work, we report a novel process for fabricating suspended silicon dioxide micro-structures inside the anisotropically etched cavity formed in (100) silicon wafers. Using this new process, the moving parts are "recessed" in the substrate which can be packaged and handled easily compared to non-recessed structures. In the fabrication process, spin coated liquid photoresist is used. There is a common problem of thinning of photoresist on convex edges of the cavity during photolithography steps. As a result, silicon dioxide is etched away from these edges. During subsequent anisotropic etching of silicon to release the microstructures, the unprotected convex edges are also etched resulting in failure of the process. To overcome this problem, two different methods are used. In the first method, high viscosity positive photoresist (Shipley STR-1045) is used and the multiple coatings are carried out to cover the convex edges adequately. This protects the oxide on convex edges in buffered hydrofluo...
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各向异性蚀刻腔内SIO2微力学结构的设计与制备
在目前的工作中,我们报告了一种在(100)硅片中形成的各向异性蚀刻腔内制造悬浮二氧化硅微结构的新工艺。使用这种新工艺,运动部件被“嵌入”在基板中,与非嵌入结构相比,可以很容易地封装和处理。在制作过程中,使用了自旋涂覆的液体光刻胶。在光刻过程中,有一个常见的问题是在腔体的凸边上光刻胶变薄。结果,二氧化硅从这些边缘被蚀刻掉了。在随后的硅各向异性蚀刻以释放微结构时,未保护的凸边也被蚀刻,导致工艺失败。为了克服这个问题,使用了两种不同的方法。在第一种方法中,使用高粘度正光刻胶(Shipley STR-1045),并进行多重涂层以充分覆盖凸边。这可以保护缓冲流体中凸边上的氧化物。
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