{"title":"Effect Of The Etching Regimes On The Memristor Properties Of Al2O3 Thin Layers","authors":"N. Rybina, N. Rybin","doi":"10.1109/RADIOELEKTRONIKA49387.2020.9092408","DOIUrl":null,"url":null,"abstract":"The switching effect in the Au-Ta-Al<inf>2</inf>O<inf>3</inf>-Cr structure was revealed. The memristor properties with bipolar switching were revealed at switching voltages U<inf>set</inf> = 5.2 V and U<inf>reset</inf> = -3.5 V. The ratio of high resistance and low resistance states was 7.10<sup>5</sup> Ohms. Effect of the etching regimes on the memristor properties of Al<inf>2</inf>O<inf>3</inf> thin layers was studied. It was revealed that the best way to remove aluminum oxide is to etch the structures in a 20% HF solution without contact protection.","PeriodicalId":131117,"journal":{"name":"2020 30th International Conference Radioelektronika (RADIOELEKTRONIKA)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 30th International Conference Radioelektronika (RADIOELEKTRONIKA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADIOELEKTRONIKA49387.2020.9092408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The switching effect in the Au-Ta-Al2O3-Cr structure was revealed. The memristor properties with bipolar switching were revealed at switching voltages Uset = 5.2 V and Ureset = -3.5 V. The ratio of high resistance and low resistance states was 7.105 Ohms. Effect of the etching regimes on the memristor properties of Al2O3 thin layers was studied. It was revealed that the best way to remove aluminum oxide is to etch the structures in a 20% HF solution without contact protection.
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