Dual voltage design for minimum energy using gate slack

Kyung Ki Kim, V. Agrawal
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引用次数: 13

Abstract

This paper presents a new slack-time based algorithm for dual Vdd design to achieve maximum energy saving. Although a global optimum is sought computation time is kept low. The slack of a gate is defined as the difference between the critical path delay for the circuit and the delay of the longest path through that gate. A linear-time algorithm is used for computing slacks for all gates of the circuit. Positive non-zero slack gates are classified into two groups, one in which all gates can be unconditionally assigned low voltage and the other where only a selected subset can be assigned low voltage without violating the positive non-zero slack requirement. Multiple voltage boundaries are given special consideration. The overall complexity of this power optimization algorithm is linear in number of gates as compared to a previously published exponential-time exact algorithm using mixed integer linear program (MILP). We apply the new algorithm to optimize ISCAS'85 benchmark circuits and compare the results with those from MILP. We avoid the use of level converters at multiple voltage boundaries. Energy savings from the new slack-time based algorithm is very closed to those from MILP. For c880, the energy saving is 22% for subthreshold voltage operation and 50% for nominal operation in PTM CMOS 90nm. For c2670 nominal voltage design, time of dual voltage optimization is reduced 43X compared to the MILP method. This new algorithm is beneficial for large circuits with many large positive slack paths that would require enormous time for optimization by the MILP approach.
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双电压设计,采用栅极松弛,能量最小
本文提出了一种新的基于空闲时间的双Vdd设计算法,以达到最大的节能效果。虽然寻求全局最优,但计算时间很低。门的松弛定义为电路的关键路径延迟与通过该门的最长路径延迟之差。采用线性时间算法计算电路所有门的时延。将正非零松弛门分为两组,一组是所有门都可以无条件分配低电压,另一组是在不违反正非零松弛要求的情况下,只有选定的子集可以分配低电压。特别考虑了多个电压边界。与先前发布的使用混合整数线性规划(MILP)的指数时间精确算法相比,该功率优化算法的总体复杂性在门的数量上是线性的。我们将新算法应用于ISCAS’85基准电路的优化,并与MILP的结果进行了比较。我们避免在多个电压边界使用电平变换器。基于空闲时间的新算法的节能效果与MILP算法非常接近。对于c880,在PTM CMOS 90nm中,亚阈值电压工作节能22%,标称工作节能50%。对于c2670标称电压设计,双电压优化时间比MILP方法缩短了43倍。该算法适用于具有大量正松弛路径的大型电路,这类电路用MILP方法进行优化需要大量的时间。
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