{"title":"A Methodology to Characterize the Low-Frequency Noise of InP Based Transistors","authors":"A. de Souza, J. Nallatamby, M. Prigent","doi":"10.1109/EMICC.2008.4772244","DOIUrl":null,"url":null,"abstract":"This paper describes a methodology to measure the low-frequency noise of InP-based transistors. These transistors have demonstrated transition frequencies (ft) greater than 200 GHz, generally achieved at current densities in excess of 200 kA/cm2. Depending on the DC current gain, this may represent base currents of some mA. For the first time, curves of Sib, Sic and Sibic for base currents of up to 3 mA are demonstrated, in excellent agreement with those obtained from one-port measurements. This is only possible with an accurate experimental characterisation of the small-signal parameters of the transistor, which are frequency-dependent due to self-heating.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"s3-23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper describes a methodology to measure the low-frequency noise of InP-based transistors. These transistors have demonstrated transition frequencies (ft) greater than 200 GHz, generally achieved at current densities in excess of 200 kA/cm2. Depending on the DC current gain, this may represent base currents of some mA. For the first time, curves of Sib, Sic and Sibic for base currents of up to 3 mA are demonstrated, in excellent agreement with those obtained from one-port measurements. This is only possible with an accurate experimental characterisation of the small-signal parameters of the transistor, which are frequency-dependent due to self-heating.