{"title":"Multi-cantilever HEMT-based resonant sensor","authors":"I. Khmyrova, Elena Shestakova","doi":"10.1109/COMCAS.2009.5386064","DOIUrl":null,"url":null,"abstract":"In this paper resonant sensor based on micro-machined high-electron mobility transistor (HEMT) in which multiple suspended resonant cantilevers serve as floating gates is proposed and its analytical and lumped equivalent circuit models are developed. The proposed HEMT-based multi-cantilever resonant sensor enables electrostatic actuation and electrical readout. Mass absorption by a cantilever results in the change in its mechanical resonant frequency. Mechanical oscillations of such a cantilever excited electrically control the source-drain current. Thus, its resonant frequency shift can be detected as a frequency shift in the resonant peak of the source-drain current. Mechanical oscillations of each cantilever and electromechanical transducer are represented by relevant circuit components. The developed equivalent circuit of multi-cantilever resonant sensor was used to simulate its frequency response using Is-Spice software. The simulation reveals an enhanced source-drain current with a peak at a single frequency for the array of the identical cantilevers. In the case of multiple different cantilevers the simulated source-drain current reveals peaks at frequencies corresponding to mechanical resonances of the cantilevers, as expected.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMCAS.2009.5386064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper resonant sensor based on micro-machined high-electron mobility transistor (HEMT) in which multiple suspended resonant cantilevers serve as floating gates is proposed and its analytical and lumped equivalent circuit models are developed. The proposed HEMT-based multi-cantilever resonant sensor enables electrostatic actuation and electrical readout. Mass absorption by a cantilever results in the change in its mechanical resonant frequency. Mechanical oscillations of such a cantilever excited electrically control the source-drain current. Thus, its resonant frequency shift can be detected as a frequency shift in the resonant peak of the source-drain current. Mechanical oscillations of each cantilever and electromechanical transducer are represented by relevant circuit components. The developed equivalent circuit of multi-cantilever resonant sensor was used to simulate its frequency response using Is-Spice software. The simulation reveals an enhanced source-drain current with a peak at a single frequency for the array of the identical cantilevers. In the case of multiple different cantilevers the simulated source-drain current reveals peaks at frequencies corresponding to mechanical resonances of the cantilevers, as expected.