Features of Liquid–Phase Epitaxy of (InSb)1–z(Sn2)z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

Abstract

By the method of liquid-phase epitaxy, narrow-gap layers of solid solutions of indium antimonide molecular substitution were grown from a limited volume of indium solution - melt. The layers were grown on GaAs (100) and GaP (111) substrates.It is shown that the binary compound of indium antimonide in an indium solution at temperatures of 350-220°C does not dissociate into individual In and Sb atoms, but is mainly in the form of InSb molecules. The photosensitivity of nGaAs-p$(InSb)_{1-z}(Sn_{2})_{1-z}$ and nGaP-p$(InSb)_{1-z}(Sn_{2})_{z}$ structures have been studied.An anomalous temperature dependence of the current-voltage characteristic of the nGaP-p$(InSb)_{1-z}(Sn_{2})_{z}$ structure was found. The results are explained on the basis of a model that takes into account the possibility of the formation of defects and defect-impurity complexes of the “vacancy + recombination impurity center” type with increasing temperature.