{"title":"A 10Gb/s Burst-Mode Laser Diode Driver for IEEE 802.3av 10G-EPON Applications","authors":"Ye Lin, En Zhu, Gaowei Gu","doi":"10.1109/ICFN.2010.88","DOIUrl":null,"url":null,"abstract":"The IEEE standards board has announced the approval of the 10G-EPON standard, IEEE Std. 802.3av. In this paper, a 10Gb/s burst-mode laser diode driver for the symmetric-rate 10G-EPON ONU applications is described. It is designed with a low-cost 0.18µm CMOS process. Post-simulation results that it has a speed of 10.3125Gb/s, and is able to provide up to 35mA modulation current under a 1.8V power supply. The burst turn-on/-off delays are both less than 1ns. The dimension of the laser diode driver is 575µm × 675µm.","PeriodicalId":185491,"journal":{"name":"2010 Second International Conference on Future Networks","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Second International Conference on Future Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICFN.2010.88","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The IEEE standards board has announced the approval of the 10G-EPON standard, IEEE Std. 802.3av. In this paper, a 10Gb/s burst-mode laser diode driver for the symmetric-rate 10G-EPON ONU applications is described. It is designed with a low-cost 0.18µm CMOS process. Post-simulation results that it has a speed of 10.3125Gb/s, and is able to provide up to 35mA modulation current under a 1.8V power supply. The burst turn-on/-off delays are both less than 1ns. The dimension of the laser diode driver is 575µm × 675µm.
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