D. Priante, Rami T. Elafandy, Aditya Prabaswara, B. Janjua, Chao Zhao, Malleswararao Tangi, M. Alias, Y. Alaskar, A. Albadri, A. Alyamani, T. Ng, B. Ooi
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引用次数: 0
Abstract
We show reduced junction temperature and heat dissipation in AIGaN nanowires LEDs on a metal substrate compared to devices on a silicon substrate by employing the forward-voltage and peak-shift methods.
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