Monte Carlo Modeling of the Diodes with Lateral Resonant Tunneling Border

Abstract

Diodes with resonant tunneling border (RTB) are studied as possible high speed and wide-band devices. The diodes represent planar two-terminal n+-n-n+-GaAs-based structures containing the lateral active border as a AlGaAs/GaAs double barrier resonant tunneling structure connected to anode contact. The 2-D model of electron transport in the device is proposed. The analysis of the diodes operation was performed using ensemble Monte Carlo technique. Transfer matrix approach for simulation of tunneling transfer is applied. The influence of parameters of the diode structure such as a position of RTB, a composition of AlGaAs barriers and a material doping on current - voltage characteristics of diode has been investigated.