{"title":"Signal and noise neural models of pHEMTs","authors":"V. Markovic, Z. Marinković","doi":"10.1109/NEUREL.2002.1057995","DOIUrl":null,"url":null,"abstract":"Low-noise pHEMT transistors, that have excellent performances at microwave frequencies, can be described by their scattering and noise parameters. In this paper, a pHEMT neural model, based on multilayer perceptron neural networks is proposed. The obtained neural models can predict transistor's signal and noise performances very efficiently and accurately for a broad range of bias conditions in the operating frequency range.","PeriodicalId":347066,"journal":{"name":"6th Seminar on Neural Network Applications in Electrical Engineering","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"6th Seminar on Neural Network Applications in Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEUREL.2002.1057995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Low-noise pHEMT transistors, that have excellent performances at microwave frequencies, can be described by their scattering and noise parameters. In this paper, a pHEMT neural model, based on multilayer perceptron neural networks is proposed. The obtained neural models can predict transistor's signal and noise performances very efficiently and accurately for a broad range of bias conditions in the operating frequency range.
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