A Method of Gate-Level Circuit Reliability Estimation Based on Iterative PTM Model

Jie Xiao, Jianhui Jiang, Xuguang Zhu, Chengtian Ouyang
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引用次数: 10

Abstract

The rapid development of nanotechnology has opened up new possibilities and introduced new challenges for circuit design. It is very important to study new analysis methods for accurate circuit reliability. Few methods for evaluating circuit reliability were proposed in recent years. For example, the original probabilistic transfer matrix (PTM) model has large time and space overhead, so it can only calculate small scale circuits, the improved PTM model proposed in [2] can handle large scale circuits but it also has large time overhead. In this paper, the concept of macro-gate is defined and an iterative PTM model based on macro-gate is proposed. Based on this model, a circuit reliability evaluation algorithm that can calculate the circuit reliability from primary input to any level of the circuit is given. The complexity of the proposed algorithm related to the number of macro-gates contained in the circuit is linear. Experimental results show that the proposed method has the same accuracy as the PTM model, but it has lower time overhead for large circuits.
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基于迭代PTM模型的门级电路可靠性估计方法
纳米技术的快速发展为电路设计带来了新的可能性,也带来了新的挑战。研究新的精确电路可靠性分析方法具有十分重要的意义。近年来提出了几种评估电路可靠性的方法。例如,原始概率传递矩阵(PTM)模型的时间和空间开销较大,只能计算小规模电路,[2]提出的改进PTM模型可以处理大规模电路,但时间开销也较大。定义了宏门的概念,提出了一种基于宏门的迭代PTM模型。在此模型的基础上,给出了一种能够计算从一次输入到任意电平的电路可靠性的电路可靠性评估算法。该算法的复杂度与电路中包含的宏门数量呈线性关系。实验结果表明,该方法具有与PTM模型相同的精度,但对于大型电路具有更低的时间开销。
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