Analytical prediction formula of random variation in high frequency performance of weak inversion scaled MOSFET

Abstract

This paper proposes an analytical prediction formula of probability distribution of random variation in high frequency performance of weak inversion region operated scaled MOSFET where the manufacturing process induced physical defects of MOSFET have been taken into account. Furthermore, the correlation between process parameter included random variables which contribute such variation, and the effects of physical differences between N-type and P-type MOSFET have also been considered. As the scaled MOSFET is of interested, the up to dated formula of physical defects induced random variation in parameter of such scaled device has been used as the basis. The proposed formula can accurately predict the probability distribution of random variation in high frequency performance of weak inversion scaled MOSFET with a confidence level of 99%. So, it has been found to be an efficient alternative approach for the variability aware design of various weak inversion scaled MOSFET based signal processing circuits and systems.