R. Grötzschel, V. A. Kagadey, P. Knothe, N. I. Lebedeva, G. Ozur, D. I. Proakurovaky
{"title":"INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING","authors":"R. Grötzschel, V. A. Kagadey, P. Knothe, N. I. Lebedeva, G. Ozur, D. I. Proakurovaky","doi":"10.1515/9783112575666-050","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":432951,"journal":{"name":"EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/9783112575666-050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}