Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

Abstract

GaN-based HEMTs feature a lot of superior material properties, including high electron mobility, wide band-gap, and large breakdown field. These properties are very suitable for power electronic applications. However, due to the high two dimensional electron gas (2DEG) density, a conventional GaN HEMT is an inherently normally-on device. Considering safety design in the power electronic systems, high performance normally-off GaN HEMT s are needed [1] . FinFet (tri-gate) structure has recently been applied to GaN HEMTs for the normally-off operation. However, a conventional FinFet (tri-gate) GaN HEMT requires very small channel widths to achieve the normally-off operation. This needs very critical process conditions and could cause the on-resistance (R on ) to be obviouslhy degraded [2] . In this study, an InAlN/GaN fin-MOSHEMT combined with fluorine treatment is demonstrated. It doesn’t require very small channel widths to achieve a normally-off HEMT while having excellent performances.