Elastic and inelastic tunneling through polyimide LB films

M. Iwamoto, T. Kubota
{"title":"Elastic and inelastic tunneling through polyimide LB films","authors":"M. Iwamoto, T. Kubota","doi":"10.1109/ICPADM.1994.413972","DOIUrl":null,"url":null,"abstract":"The electron transport mechanism through polyimide (PI) Langmuir-Blodgett (LB) films, with monolayer thickness of 0.4 nm, was investigated by means of current-voltage (I-V) measurement and Inelastic Electron Tunneling Spectroscopy (IETS). Tunnel junctions with a structure of Au/PI/Pb were examined. It was found that electrons tunnel across the PI LB films without loss of their own energy. Tunnel junctions with a PORPI monolayer sandwiched between PI layers were also examined. Here PORPI is polyimide containing tetraphenylporphyrin moiety. It was found that electrons tunnel across the junctions, accompanying the energy loss due to the excitation of vibrational modes of PORPI molecules and the excitation of electron transitions in PORPI molecules.<<ETX>>","PeriodicalId":331058,"journal":{"name":"Proceedings of 1994 4th International Conference on Properties and Applications of Dielectric Materials (ICPADM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 4th International Conference on Properties and Applications of Dielectric Materials (ICPADM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICPADM.1994.413972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The electron transport mechanism through polyimide (PI) Langmuir-Blodgett (LB) films, with monolayer thickness of 0.4 nm, was investigated by means of current-voltage (I-V) measurement and Inelastic Electron Tunneling Spectroscopy (IETS). Tunnel junctions with a structure of Au/PI/Pb were examined. It was found that electrons tunnel across the PI LB films without loss of their own energy. Tunnel junctions with a PORPI monolayer sandwiched between PI layers were also examined. Here PORPI is polyimide containing tetraphenylporphyrin moiety. It was found that electrons tunnel across the junctions, accompanying the energy loss due to the excitation of vibrational modes of PORPI molecules and the excitation of electron transitions in PORPI molecules.<>
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通过聚酰亚胺LB薄膜的弹性和非弹性隧道
采用电流-电压(I-V)测量和非弹性电子隧道能谱(IETS)技术,研究了电子在厚度为0.4 nm的聚酰亚胺(PI) Langmuir-Blodgett (LB)薄膜中的传递机理。研究了Au/PI/Pb结构的隧道结。发现电子在PI LB薄膜上隧穿而不损失自身能量。我们还研究了在PI层之间夹有PORPI单层的隧道结。PORPI是含有四苯基卟啉部分的聚酰亚胺。研究发现,电子隧穿结,伴随着PORPI分子振动模式的激发和PORPI分子中电子跃迁的激发而产生的能量损失。
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