Threshold voltage roll-off and DIBL model for DMDG SON MOSFET: A quantum study

Abstract

As an inevitable effect of scaling, various short-channel effects have become serious matter of concern for semiconductor industry. The scenario gets more complicated as the channel length shrinks to deca-nanometer range and quantum mechanical effect comes into picture. In this paper, a quantum analytical threshold voltage roll-off and DIBL model for Dual Material Double Gate (DMDG) MOSFET is presented for the first time. Our expressions are derived by using effective-doping model, while incorporating quantum mechanical effects and SCEs. Variation of the quantum threshold voltage with silicon film thickness is studied for different values of work functions of front gate materials. Based on this quantum threshold voltage model, the DIBL characteristics are obtained for DMDG SON MOSFET. The sub-exponential dependence of the threshold voltage roll-off on channel length is also observed with silicon film thickness variation.