I. Storozhenko, M. Kaydash, O. Yaroshenko, Y. Arkusha
{"title":"Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As","authors":"I. Storozhenko, M. Kaydash, O. Yaroshenko, Y. Arkusha","doi":"10.1109/UWBUSIS.2018.8520161","DOIUrl":null,"url":null,"abstract":"The paper presents the results of numerical experiments on the oscillation generation using the n<sup>+</sup>-n-n<sup>+</sup> transfer electron device based on InGaP/lnPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the diode is 2.5 µm with an ionized impurity concentration of 10<sup>16</sup> cm<sup>−3</sup>. It is paper shown that the output power and the efficiency of Gunn generators increase several times when the InGaP/lnPAs graded-gap semiconductors are used. The reasons for this increase are considered. The highest power of 11.3 kW/cm<sup>2</sup> with efficiency of 10.2% at frequency of 40 GHz belong to In<inf>0.4</inf>Ga<inf>0.6</inf>P/lnP<inf>0.4</inf>As<inf>0.6</inf>diode.","PeriodicalId":167305,"journal":{"name":"2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UWBUSIS.2018.8520161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InGaP/lnPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the diode is 2.5 µm with an ionized impurity concentration of 1016 cm−3. It is paper shown that the output power and the efficiency of Gunn generators increase several times when the InGaP/lnPAs graded-gap semiconductors are used. The reasons for this increase are considered. The highest power of 11.3 kW/cm2 with efficiency of 10.2% at frequency of 40 GHz belong to In0.4Ga0.6P/lnP0.4As0.6diode.
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