Cost-effective variability reduction approaches to enable future technology nodes

A. Strojwas
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引用次数: 2

Abstract

This paper will describe a comprehensive study of the primary sources of variability and their effects on active devices, interconnect and ultimately product performance and yield. We will first provide an overview of process variability sources and the resulting random and systematic variability down to 28nm. Next we will present the evolution of yield loss mechanisms and characterization methods for assessing process-design interactions with a focus on layout printability for 28nm and below. To overcome the impact of such a high level of variability on product performance, circuit designers should adopt advanced statistical process characterization, performance verification and optimization techniques. We will describe robust design methodology requirements based on statistical optimization approaches with realistic process/device characterization for logic, memory and analog circuits. We will then present an extremely regular layout methodology for 28nm and below. The key to the practical implementation of this methodology is the creation of a design fabric with a limited number of printability friendly patterns that enable the co-optimization of circuit, process and design. We will demonstrate that this methodology will enable future technology nodes utilizing current generation lithography while minimizing cost per good die.
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具有成本效益的可变性减少方法,使未来的技术节点成为可能
本文将全面研究可变性的主要来源及其对有源器件、互连和最终产品性能和良率的影响。我们将首先概述工艺可变性来源以及由此产生的随机和系统可变性,直至28nm。接下来,我们将介绍产率损失机制的演变和表征方法,以评估工艺设计相互作用,重点关注28nm及以下的布局可印刷性。为了克服如此高水平的可变性对产品性能的影响,电路设计者应该采用先进的统计工艺表征、性能验证和优化技术。我们将描述基于统计优化方法的稳健设计方法要求,并具有逻辑,内存和模拟电路的实际过程/器件特性。然后,我们将提出一种极其规则的28nm及以下的布局方法。该方法实际实施的关键是创建具有有限数量的可印刷性友好模式的设计结构,从而实现电路、工艺和设计的共同优化。我们将证明这种方法将使未来的技术节点利用当前一代光刻技术,同时最大限度地降低每个好芯片的成本。
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