Design of Ultra Wideband Amplifier Using Single Hetero-junction Bipolar Transistor for Wireless Applications

A. Aneja, Mithilesh Kumar
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Abstract

The paper describes a technique for improvement in gain and noise figure of an Ultra Wideband amplifier. The paper gives an overview of the Ultra Wideband technology and the amplifier as well. The input to the amplifier comes from the UWB signal generator which is then sent to the antenna after amplification. The design is proposed using a single stage amplifier circuit and attains a better response along the bandwidth with minimum distortion and low losses. The circuit consists of Hetro-junction Bipolar transistor or HBT that is biased using a voltage divider bias. Key parameters have been analysed on Serenade SV simulation tool. The amplifier gain in the whole bandwidth has been improved and the noise figure is also reduced in that bandwidth. The reflection from the either ports in minimised substantially. The proposed amplifier has a simple structure and works satisfactorily over the entire bandwidth.
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无线应用中单异质结双极晶体管超宽带放大器的设计
本文介绍了一种提高超宽带放大器增益和噪声系数的技术。本文对超宽带技术及其放大器进行了概述。放大器的输入来自超宽频信号发生器,经过放大后送到天线。该设计采用单级放大电路,在带宽上获得了较好的响应,失真最小,损耗低。该电路由使用分压器偏置偏置的异质结双极晶体管或HBT组成。在Serenade SV仿真工具上对关键参数进行了分析。放大器在整个带宽内的增益得到了提高,噪声系数也得到了降低。两个端口的反射都大大减小了。所提出的放大器结构简单,在整个带宽范围内都能令人满意地工作。
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