{"title":"Temperature dependence of the two beam coupling gain coefficient of photorefractive GaP","authors":"K. Kuroda, Y. Okazaki, T. Shimura, M. Itoh","doi":"10.1364/pmed.1991.tuc5","DOIUrl":null,"url":null,"abstract":"Undoped semi-insulating GaP is photorefractive material which is sensitive to the laser light of the wavelength between 0.6 μm and 0.9 μm1). He-Ne lasers and GaAlAs laser diodes belong to this spectral region. This material is important for constructing compact systems with laser diodes.","PeriodicalId":355924,"journal":{"name":"Photorefractive Materials, Effects, and Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photorefractive Materials, Effects, and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/pmed.1991.tuc5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Undoped semi-insulating GaP is photorefractive material which is sensitive to the laser light of the wavelength between 0.6 μm and 0.9 μm1). He-Ne lasers and GaAlAs laser diodes belong to this spectral region. This material is important for constructing compact systems with laser diodes.
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