{"title":"A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar","authors":"E. Ragonese, A. Scuderi, G. Palmisano","doi":"10.1109/EMICC.2008.4772341","DOIUrl":null,"url":null,"abstract":"In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772341","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply.
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