{"title":"Studies on H2O-based Al2O3 deposited on as-grown CVD graphene","authors":"Wenrong Wang, C. Liang, Tie Li, Yuelin Wang","doi":"10.1109/3M-NANO.2013.6737390","DOIUrl":null,"url":null,"abstract":"In this paper, graphene films were synthesized by chemical vapor deposition. Raman spectra and transmission electron microscope indicated the graphene films were few-layer. Al<sub>2</sub>O<sub>3</sub> films were grown directly onto the surface of graphene transferred on SiO<sub>2</sub>/Si by H<sub>2</sub>O-based atomic layer deposition method. Experiments revealed that the distribution of physically adsorbed H<sub>2</sub>O molecules on the surface of graphene decided the morphology of Al<sub>2</sub>O<sub>3</sub> film, and the O/Al ratio was close to stoichiometric condition of 1.5.","PeriodicalId":120368,"journal":{"name":"2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3M-NANO.2013.6737390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper, graphene films were synthesized by chemical vapor deposition. Raman spectra and transmission electron microscope indicated the graphene films were few-layer. Al2O3 films were grown directly onto the surface of graphene transferred on SiO2/Si by H2O-based atomic layer deposition method. Experiments revealed that the distribution of physically adsorbed H2O molecules on the surface of graphene decided the morphology of Al2O3 film, and the O/Al ratio was close to stoichiometric condition of 1.5.
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